Abstract:

A p-n type Al/Si/WOx(3.1% Ge) junction was obtained by growing 3.1% Ge doped WOx layer on an Al contacted p-type Si substrate using magnetron sputtering method. The results of SEM and EDS analysis show that the surface has a smooth and homogeneous structure and consists of 93.7% W, 3.1% Ge and 3.3% O, respectively. In order to examine the electrical properties, Ag dot contacts were deposited on the produced active layer and Al/Si/WOx(3.1%Ge)/Ag structure was obtained. Diode parameters (series resistance, barrier height, diode ideality factor, reverse saturation current) were investigated by making I-V measurements in the ±4V potential range under dark and different light intensities of the produced heterojunction. It was observed that the diode ideality factor and series resistance have values between 3.7-5.68 and 0-20Ω, respectively, and the barrier height have values between 0.12-0.18 eV, and the reverse saturation current changed depending on the light intensity. The heterojunction demonstrated standart photodiode behaviour, with a maximum fill factor value of 0.2660 under 60mW/cm2 light intensity.

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