Kablosuz haberleşme sistemlerinin gelişmesiyle birlikte bu alanda kullanılacak sistemlerin alt birleşenlerine olan talep giderek artmaktadır. Alıcı sistemlerde düşük gürültülü kuvvetlendirici (LNA) anahtar rol oynamaktadırlar. Bu elemanlar sistemin genel performansında önemli bir rol oynamaktadırlar. Sistem girişindeki düşük seviyedeki sinyalleri alarak yükseltirler bu aşamada olabildiğince düşük gürültü seviyesine sahip olması önemlidir. Bu çalışma kapsamında 5.6GHz WLAN uygulamaları ile uyumlu düşük gürültülü kuvvetlendirici (LNA) tasarımı ve üretimi gerçekleştirilmiştir. BFP720 SiGe transistörlü LNA tasarımı yapılarak sistem içindeki performansı incelenmiş ve sağladığı yüksek kazanç yanı sıra yüksek kesim voltajına olanak sağladığı için bu transistörün kullanımına karar verilmiştir. Tasarımda FR4 taban malzemesi olarak seçilmiştir. Tasarımlarda AWR microwave Office yüksek frekans programı kullanılmıştır. Yapılan ölçümlerde transistör 2.8V ve 10mA ile beslenerek 5.6GHz bandında 13dB kazanç, S11<-10dB elde edilmiştir.
With the development of wireless communications systems, the demand for the subconnectors of the systems to be used in this area is increasing. They play a key role in the receptor systems with low noise enhancers (LNAs). These elements play an important role in the overall performance of the system. It is important to have the lowest level of noise as possible at this stage by taking the low level of signals at the system entrance. In this study, the design and production of a low noise amplifier (LNA) compatible with 5.6GHz WLAN applications has been carried out. The BFP720 SiGe transistor LNA design has studied the performance within the system and has been decided to use this transistor because it provides high profit as well as high cutting voltage. In the design, it was selected as the FR4 base material. The AWR microwave Office high-frequency program is used in designs. In the measured measurements, the transistor was powered by 2.8V and 10mA, and the 5.6GHz band gained 13dB, S11<-10dB.
With the recent rapid development in wireless communication systems the demands to its sub-systems also had increased. One of the key element in sub-systems is Low Noise Amplifier (LNA) stage. The performance of this stage has the highest effect on the overall performance of the whole system. Amplification of the low amplitude input signals with the possible lowest noise is at most importance. Herein, design and its realization of a high performance, low cost, and wideband Low Noise Amlifier (LNA) for 5.6 GHz WLAN application had been taken into the study. BFP720 SiGe had studied and determined as an optimal transistor for the aimed LNA design due to its high gain and cut-off voltage values. The aimed LNA design had been simulated in AWR microwave Office high frequency simulator using FR4 material. Based on the experimental results, with a DC biased condition of 2.8 V 10 mA, the designed achieves a gain of 13 dB with S11 value of less than -10 dB at 5.6 GHz.
Alan : Fen Bilimleri ve Matematik; Mühendislik
Dergi Türü : Uluslararası
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