Özet:

Undoped ZnO and Ni-doped ZnO thin films were synthesized on glass substrate using the SILAR method. The aim of this work is the analysis of NO gases using Zn1-xNixO sensors concentrations in the range from 100 ppb to 25 ppm. The gas sensing properties of the films for low NO gas concentrations were carefully investigated within a temperature range from 35 to 135ºC. The gas measurement results revealed that the doping process was strongly affected by the response of Ni-doped ZnO thin films. The Zn0.75Ni0.25O sensor exhibited higher sensitivity, faster response, and recovery times for NO gas at low (100 ppb) concentration. It was concluded that the Ni dopant enhanced the properties of ZnO films for gas sensor applications by changing the microstructure, morphology, and bandgap of ZnO material.

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