Abstract:

: With the growth of renewable energy sources around the world, the demand for cost-effective and efficient converters that can operate at high frequency and have less switching and conduction loss has grown. High efficiency is one of the most difficult goals to attain in power electronic converters. Wideband switches can be used to achieve this purpose, although they add to the system’s cost. In this paper, a comparison between SiC MOSFET and Si MOSFET switches was carried out for a 3 KW I-IIB Buck-boost/Boost non-isolated reduced redundant converter for the photovoltaic system with a wide input voltage range. Mathematical calculations were used to investigate switching and conduction losses, and software simulations in PSIM were used to verify their authenticity. In high-frequency power applications, the results suggest that SiC MOSFET can work more efficiently than Si MOSFET. Si MOSFETs, on the other hand, are still preferred for small voltage and low power applications due to their lower costs.

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