Özet:

This study aimed at the production of the Schottky diot structure of organic interface layer and the frequency effect on capacity-voltage-voltage measurements. In this range, a silicon semi-related crystal of the type n, with a thickness of 350 μm, (100) oriented, with a diameter of 2 inches, 1-20 Ω.cm, is used. On this crystal "(E)-5,5-difloro-1,3,7,9-tetramethyl-10-fenyl-2-(2-(piridin-2-yl)vinyl)-5H-54,64-dipirol [1,2-c:2',1-'f][1,3,2] diazaborin" (BODIPY-Pyridine) thin film was covered using spin covering technique. The thermal evaporation system was used to cover the omic and verifying contacts with the evaporation of indium (In) and gold (Au) and the Au/BODIPY-Pyridine/n-Si/In Schottky diode was produced. In the darkness of this structure, the measurements of capacity-voltage (C-V) and conductivity-voltage (G-V) were taken at different frequencies. According to frequency, serial resistance (Rs) and interface state intensity (Nss) values were determined by using the guidance and Hill-Coleman method accordingly.

Anahtar Kelimeler:

Özet:

In this study, it was aimed to produce an organic interface layered Schottky diode structure and frequency effect on capacitance-conductance-voltage measurements. In this context, phosphor doped n-type Si single crystal has been used as a semiconductor substrate with a 1-20 Ω.cm resistivity, (100) surface oriention, 2 inches in diameter and 350 μm thickness. The (E)-5,5-difluoro-1,3,7,9-tetramethyl-10-phenyl-2-(2-(pyridin-2-yl)vinyl)-5H-54,64-dipyrrolo [1,2-c:2',1'-f] [1,3,2] diazaborinine (BODIPY-Pyridine) thin film was coated on n-Si using the spin coating technique. Ohmic and rectifier contacts were coated by evaporation of indium (In) and gold (Au) using a thermal evaporation system and Au/ BODIPY-Pyridine/n-Si/In Schottky diode was fabricated. Capacitance-voltage (C-V) and conductance-voltage (G-V) measurements of this structure were gained at different frequencies in the dark. Contingent on the frequency, the series resistance (Rs) and the interface state density (Nss) values were identified by using the conductance and Hill-Coleman method, respectively.