Özet:

Cathodoluminescence (CL) is an important technique based on the light emitted from a specimen (semiconductor) in response to electron-beam irradiation. The light emitted is the results of radiative recombination of the electron-hole pairs. In the last few years the technology of group III nitride epitaxy has shown great progress on modern materials and electronic devices as well as on high electron mobility transistors (HEMTs), Light emitting diodes (LED) and photovoltaic solar cell, etc.  The characterization of GaN nanostructures (e.g. quantum wells) by an electron beam technique (e.g. cathodoluminiscence) needs a reliable simulation models because there are several phenomena associated with matter-electron beam interaction. In this paper, we present our hybrid model based on Monte Carlo and molecular dynamics methods. This model describes the electron beam interaction with the quantum wells of GaN and AlxGa1-xN. According to results, the electron beam can modify the material properties at nano scales due to the electron beam heating, that depends on electron beam parameters (accelerating voltage, primary current and scanning duration). The influence of same material parameters also is studied.  

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