Özet:

Copper oxides are one of the first semiconductors studied for device applications. In the present work, CuO thin films were deposited on fluorine-doped tin oxide (FTO) substrates via hydrothermal method without using any surfactant and the effects of reaction temperature on the properties of the films were studied. CuO thin films deposited at different reaction temperatures were characterized for their structural and optical properties using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDAX), Raman spectroscopy, and optical absorption measurements. XRD results revealed that all the films consisted of polycrystalline CuO with a monoclinic crystal structure without any impurity phase. SEM images showed that chrysanthemum-like structures were formed, the number of which increased with increasing hydrothermal reaction temperature. EDAX measurements proved the existence of Cu and O elements and showed that all the films have Cu/O ratios close to unity. The Raman spectra confirmed the formation of crystalline CuO in all the films. From the optical absorption measurements, the direct forbidden energy gap values of the CuO thin films were found to be between 1.34 eV and 1.41 eV, depending on the hydrothermal reaction temperature.

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