Özet:

In this study, InGaN thin films on amorphic glass substrates were produced directly with the thermoonic vacuum arc method, which is fast and low-cost. Thin films are accumulated at a distance between 2 different anot-substance from the application of substance heating in a single experiment. The structural and surface characteristics of the produced InGaN thin films are determined by appropriate analysis methods. The X-ray breakdown (XRD) device determines the XRD patterns and the crystal sizes are calculated by the Scherrer method. Hekzagonal wurtzite crystal made of 50% In contributed GaN films have been determined to be produced. The surface characteristics of the InGaN thin films have been detected through an atomic power microscope. Surface characteristics are determined and histogram analyses and size analyses are performed. In the production of GaN-based devices, the thermionic vacuum ark method has been shown to be an alternative production system.

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