Özet:

The paper determines the technological regimes for obtaining GexSi1-x alloys by introducing germanium atoms into single-crystal silicon by the diffusion method. From the results of the study, it was found that the fundamental parameters of the formed GexSi1-x alloys differ from the fundamental parameters of the original silicon, in particular, the energy values of the silicon band gap change. Elemental analysis of the surface of the samples showed that the concentration of silicon (in atomic percent) was ~70.66%, germanium ~29.36%. It was assumed that on the silicon surface and in the front part, a thin layer of an alloy of a compound with a composition of approximately Ge0.3Si0.7 (0.5÷2 μm) would be formed. Analysis of the spectra (p shows that the spectrum contains peaks ~303 cm-1 and ~406 cm-1, corresponding to the Ge-Ge and Si-Ge bonds, respectively. It was also shown that GexSi1-x binary compounds are a new material for modern electronics, the possibility of creating properties on their basis in electronics was shown. It is proposed on their basis to create devices with new functionality and highly efficient solar cells.

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