Özet:

In this study, changes in mechanical properties as a result of uniaxial tensile strain applied to Cu nanowires containing different percentages of vacancy and interstitial defects were investigated by Molecular Dynamics (MD) simulation method. The Embedded Atom Method (EAM) potential function, which includes many-body interactions, was used to determine the forces acting on Cu atoms. Depending on the density of the point defects, the stress-strain curves, Young's modulus, yield stress values were determined as a result of the uniaxial tensile stress applied to the Cu model nanowire. Structural changes, dislocation formations and their spread resulting from the applied deformation were examined by common neighbour analysis method (CNA) and dislocation analysis (DXA), respectively. It was determined that hcp unit cell stacking fault defects and Shockley dislocations caused by tensile strain were effective on the mechanical properties of the model nanowire.

Anahtar Kelimeler: