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Photoconductivity of Selenium and Sulphur Doped a-Si:H thin Films
2005
Journal:  
Turkish Journal of Physics
Author:  
DOI:  
10.3906/sag-1206-40
Abstract:

This paper presents a study of photoconductivity of S- and Se-doped a-Si:H as a function of composition and temperature. Temperature dependence of photoconductivity of the films was measured under the illumination of white light at 100~mW/cm2. The room temperature photoconductivity for the same doping concentration of 10-4 (to develop H2Se/SiH4 and H2S/SiH4) is found to be higher in Se-doped -- than S-doped -- a-Si:H film due to a low defect density. From the measurement of intensity dependence of photoconductivity, it is found that the addition of Se and S changes the recombination mechanism from monomolecular, for low-doped films, to bimolecular at higher levels of doping of Se and S.

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Turkish Journal of Physics

Field :   Fen Bilimleri ve Matematik

Journal Type :   Uluslararası

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Article : 1.313
Cite : 223
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Turkish Journal of Physics