Özet:

In this study, various metal/semiconductor contact structures were simulated using Al, Mo, Cu and Ag metals and n-type Si semiconductor. The semi-logarithmic forward current-voltage characteristics of the contacts were obtained using thermionic emission theory between 0 to 0.25 V range. The barrier heights and ideality factors of the contact models were calculated depending on the work function of the metal. Lowest obstacle height is calculated in Al/n-Si contact model as 0.64 eV and the highest obstacle height is calculated in Ag/n-Si contact model as 0.82 eV. A meshing process was performed by dividing the contact models into separate volumetric cells. Thus, during the current conduction, the electron concentration of the surface, the hole concentration and the electrical potential changes along the contact geometry were simulated and the effects of different parameters were also examined by simulation of Schottky contact.

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