Abstract:

In this study, gold/poly(3-hexylthiophene) prepared using different P3HT:PCBM contribution rates (4:1 and 10:1):[6,6]-phenyl C61 butyric acid methyl ester/n-type silicon (Au/P3HT:PCBM/n-Si) metal-polymer-parallelated (MPY) Schottky barrier diots (SBD) capacitans-voltage (C-V) and conductivity-voltage (G/w-V) characteristics were compared at room temperature and 1 MHz frequency value. For samples with 4:1 and 10:1 P3HT:PCBM contribution rates, interface state intensities (Nss) and serial resistance (RS) are calculated from C-V and G/w-V measurements. According to the results of the analysis, with the increase in the PCBM contribution within the active layer (P3HT:PCBM), the MPY SBD produced using the P3HT:PCBM interface at 4:1 has shown more ideal performance. Given this outcome, Au/P3HT:PCBM/n-Si MPY SBD’s frequency-related dielectric characteristics with a better performance 4:1 P3HT:PCBM contribution rate were studied by measurements in the frequency range of 10 kHz-2 MHz at room temperature. With the use of C-V and G/w-V measurements for MPY SBD produced with the 4:1 P3HT:PCBM ratio, the dielectrial fix (ε'), dielectrial loss (ε''), loss tangent (tanδ), ac conductivity (sac) and the real and imaginary parts of the electric module (M' and M'') are calculated. According to this, the values e' and e' are decreasing with the increase in frequency, while in the lost tangent values there is almost no change with the frequency. This change in the values of e' and e' depending on frequency is believed to be a result of interference polarization. On the other hand, the parameters of sac, M' and M' have been observed to increase with increased frequency. According to the results obtained, these parameters for Au/P3HT:PCBM/n-Si MPY SBD were strongly linked to frequency. However, in this study, with the increase in the PCBM contribution concentration in the P3HT:PCBM organic polymer mixture, Au/P3HT:PCBM/n-Si MPY SBD showed more ideal diot behavior as a result of electrical analysis. This will enable the production of higher performance electronic and optoelectronic devices with increased PCBM concentration in Au/P3HT:PCBM/n-Si MPY SBDs.