Bi-layer coatings from sputtered indium tin oxide (ITO) and gallium doped zinc oxide (Ga:ZnO) were investigated for transparency in the visible range of the electromagnetic spectrum, optical rejection ability in the near infrared spectrum and conductivity for the novel quantum dot-based solar cells. The multilayer stack produced at optimal oxygen partial pressure exhibits improved optical properties without worsening the electrical ones, even after additional oxidation during the reactive sputtering of the metal-oxides. With a mean optical transmittance of 91.3% in the visible region, mean optical rejection greater than 65% in the infrared range and resistivity lower than 0.4 × 10 −2 Ω.cm, this coating is good candidate for front panel electrode in the CdS/ZnS core-shell quantum dot-based solar cells.
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