Özet:

Structural, morphological and optical properties of undoped and boron doped Indium Selenide (InSe) thin films grown on glass and layered Gallium Selenide (GaSe) single crystal substrates with SILAR method have been investigated by XRD, AFM and UV-Vis spectrophotometer techniques. XRD measurements showed that the crystal structure of InSe thin films grown on glass substrates were hexagonal P61 γ-In2Se3 with lattice parameters a=7.1286 Å, c=19.382 Å and z=6 while the InSe thin films grew as hexagonal P63/mmc InSe with lattice parameters a=4.005 Å, c=16.640 Å and z=4 on GaSe single crystal substrates. The AFM images showed that average particle sizes of undoped and boron doped InSe thin films were found to be varying between 26.5-60.2 nm and 30.9-101.5 nm grown on glass and GaSe single crystal substrates, respectively. The optical absorption spectra of undoped and boron doped InSe thin films grown on both glass and GaSe single crystal substrates showed absorption maxima around the 2.00 and 2.24 eV, respectively. The calculated Urbach energies of the InSe thin films grown on glass substrates were found bigger than those of the InSe thin films grown on GaSe single crystal substrates.

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