Özet:

In this study, TiO thin films were produced on glass lamels by Dip-Coating method at 2 times 5 seconds into solutions prepared at different concentrations (A1:0.8 Molar, A2:1,25x10-2 Molar, A3:2, 5x10-3 Molar) and these films were annealed at 500 °C. In general, these films with an amorphous structure have 2θ = 25,5° (1 0 1) a spread was observed at the Miller orientation peak. With a decrease in the concentration, small grains have changed from a spherical shape to an ellipse of larger and smaller sizes. While there is a lot of reflectivities in the UV region, their transmittance values are quite high in the visible region of 400-700 nm. The energy band gap values of TiO thin films with A1, A2 and A3 concentrations were calculated as Eg = 3.52 eV; 2.60 eV and 3.03 eV, respectively. The increase in the electrical resistivity values with increasing concentration is evidence that the exhibits a typical metal-like behavior due to the particular conductivity in the oxide sub-layers.

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