Abstract:

In this study, C20H12 (perylene) thin film layer was expanded to n-Si with spin covering method. The characteristics of the Au/C20H12/n-Si (metal-perylene-halter) structure capacitan-voltage (C-V) and conductivity-voltage (G/<-V) were studied at room temperature, 200kHz-3MHz frequency and ±6V voltage range. Basic electrical parameters such as the potential brake height (B), serial resistance (Rs) and interface conditions (Nss) have been found to be largely related to frequency and voltage. Negative capacitan behavior at high frequencies was observed in the C-V curves. Using the Nicollian and Brews method, the Au/C20H12/n -Si structure's serial resistance (Rs) and Hill-Coleman method also studied the voltage-related change of the interface conditions (Nss). Serious resistance values give a pic for each frequency value and decrease with increased frequency. Interface conditions also exponentially decrease with increased frequency value. The results of the experiments found that both Rs and Nss values were very effective on C-V and G/V measurements.

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Abstract:

In this study, C20H12 (perylene) thin film interfacial layer was deposited on n-Si using spin coating method. The capacitance-voltage (C-V) and conductance voltage characteristics (G/-V) of Au/C20H12/n-Si (metal/perylen/semiconductor) structure were investigated in the frequency and voltage ranges of 200 kHz-3 MHz and ±6V, respectively. Experimental results show that the main electrical parameters such as the barrier height, series resistance (Rs) and interface states (Nss) were found strongly function of the voltage and frequency. The C-V plots have an anomalous peak and negative capacitance behavior was observed at high frequencies. In addition, voltage-dependent change profiles of the resistance (Ri) and interface states (Nss) were obtained using Nicollian and Brews method and Hill Coleman methods of the these structures using, respectively. The Rs plots give a peak for each frequency and the magnitude of this peak decreases with increasing frequency. The values of Nss also decrease exponentially with increasing frequency. Obtained experimental results were observed to be very effective on the C-V and G/-V of the Rs and Nss values.