Özet:

With the advancing technology in many areas such as optoelectronics, energy circulation, nanomedical applications and catalyst materials, the need for nano-size material production has gained importance due to the minimization of technology. Therefore, recent scientific studies have focused on the atomic-size thin film covering and enlargement technologies. It is at this point that the atomic layer accumulation (ALD) thin film production technique, which allows to make top-quality coverings in atomic-size, is activated. In this study, basic information on ALD technique was given, ZnO, TiO2 and Al2O3 thin films were covered on silicon yongs at a base temperature of 200 oC using ALD. In order to make homogeneous surface thin film covers, production has been performed in different repetitions by first changing the experimental parameters, and the most appropriate experimental conditions have been determined. Detailed characterization processes are made for ZnO, TiO2 and Al2O3 thin films that are able to provide coating homogenity under the best production conditions. Thicknesses from various points have been determined using spectroscopic elipsometry to determine whether produced films have a homogeneous structure. It also has been studied X-ray breakdown patterns in order to learn about the crystal structures.

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