Views
6
Bu çalışmada alt Bragg yansıtıcısına sahip yakın kızılötesi bölgede ışıma yapan p-i-n diyotun tasarımı, fabrikasyon detayları ve elektro-optik özellikleri incelenmektedir. İncelenen ışık yayan aygıtın aktif ışıma bölgesi 20 adet GaInNAs/GaNAs (7 nm /13 nm) kuantum kuyusu sisteminden oluşmaktadır. Alt dielektrik aynası ise 15 adet GaAs/AlAs Bragg yansıtıcı çiftlerinin üst üste tabakasal olarak büyütülmesinden oluşmaktır. Aygıtın ışıma merkez dalgaboyu 1310 nm olup, spektral yarı genişliği 14.4 nm’dir. Işıma eşik akımı 20 nA olan aygıtın, 200 mA sürülen akım varlığında maksimum ışıma gücü 38 mW’dır. Bu çalışmada, yakın kızılötesi bölgede ışıma yapan aygıt üretilmesinin ve karakterize edilmesinin yanı sıra sadece alt Bragg yansıtıcı kullanılarak bile geleneksel ışık yayan diyotlara göre ışıma spektral genişliğinin ve ışıma profilinin iyileştirilebileceğini gösterilmiştir.
This study examines the design of the p-i-n diot that radiates in the near-in-rown area with the lower Bragg reflector, the manufacturing details and the electro-optical characteristics. The active radiation area of the inspected lighting device consists of 20 GaInNAs/GaNAs (7 nm/13 nm) quantum hole systems. The subdielectric mirror consists of the upper layer extension of 15 GaAs/AlAs Bragg reflector pairs. The central wavelength of the device is 1310 nm, and the spectral semi-width is 14.4 nm. The device with a radiation edge of 20 nA, the maximum radiation power in the presence of a 200 mA flow is 38 mW. In this study, in addition to the production and characterization of the radiation device in the near-in-rown area, it was shown that the radiation spectral width and radiation profile could be improved according to the traditional radiation diots, even using only the lower Bragg reflector.
In this letter, design details and electro-optical properties of an infrared light emitting diode enhanced with a quasi-cavity structure have been reported. The quasi-cavity structure was formed with a bottom dielectric film stack. The investigated light emitting diode consists of 7 nm 20 GaInNAs/GaNAs quantum wells with 15 pairs of GaAs/AlAs Bragg Reflectors to form a quasi-cavity. The emission wavelength of the device is in between 1295 and 1325 nm with a centre wavelength of 1310 nm. The spectral linewidth is 14.4 nm. The threshold operation current of the device is 20 nA, and the maximum emission power of 38 mW is obtained under the injection current of 200 mA. It is demonstrated that using a quasi-cavity design formed by only a bottom reflector structure improve the directionality of the emission and decreases the linewidth of the infrared light emitting diode, compared with an ordinary infrared light emitting diode structure.
Journal Type : Uluslararası
Article Detail 
Similar Articles
Download PDF
Journal Information
Listen Paper
Cite
Print This Page
Share
Mendeley
