The aim of this study was to examine the effect of thermal annealing on hydrogenated intrinsic amorphous silicon a-Si:H films. Hydrogenated intrinsic amorphous films were seperately coated on glass and single cyrstalline silicon substrates by means of d.c. magnetron sputtering technique. a-Si:H/glass and a-Si:H/c-Si samples were annealed in the temperature range of 23-250oC, 23-200oC and 600-1050oC, respectively. The effect of annealing on the a-Si:H films were examined by means of Infrared vibrational transmittance spectrum technique (IR) in the wavenumber range 4000-400 cm-1 and Scanning Electron Microsope (SEM). The results were interpreted in terms of hydrogen diffusion.
Field : Fen Bilimleri ve Matematik
Journal Type : Uluslararası
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