Özet:

The Zinc Sulfide (ZnS) thin films were produced at 60 ºC on glass slides with the chemical bath deposition (CBD) method. The ZnS films were annealed for 1 hour at different temperatures in the air atmosphere. UV-visible spectrophotometer, X-ray diffraction (XRD), scanning electron microscope (SEM), energy dispersive X-ray spectroscopy (EDS), four-point probe technique and Hall-effect measurement techniques were used to examine the thermal annealing's effect on the films' optical, structural, and electrical properties. It was observed that with increased annealing temperature, the film thickness increased and thus the energy band gap decreased. It was seen that the particle size of the ZnS films grew depending on the annealing temperature, and the crystal structure turned into an amorphous structure. Finally, it was determined that with the impact of annealing the carrier type did not change, and the conductivity of the ZnS thin films increased. 

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