Abstract:

Indium oxide (In2O3) semiconducting films, as one of important transparent conducting oxides, have been produced by spray pyrolysis technique on glass substrates at 300, 350 and 400 °C substrate temperatures. X‐ray diffraction studies showed that the samples have body centered cubic In2O3 structure and the increasing of substrate temperature improves the structural properties of the films. From field emission scanning electron microscopy results, the films adhered well to the substrates and show a homogeneous distribution with layers of fine grains. The samples have exhibited direct transition with the band gap values lying in the range between 3.38 – 3.67 eV using transmittance measurements. The refractive index and extinction coefficient as a function of wavelength for the samples were investigated from reflectance spectrum by applying the envelope method in the strongly absorbing regime. The optical parameters of the In2O3

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